View RMWB12001_1302254.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RMWB12001
June 2004
RMWB12001
12 GHz Buffer Amplifier MMIC
General Description
The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB12001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.
Features
* * * * * 4 mil Substrate Small-signal Gain 25dB (typ.) 3dB compressed Pout 21dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.2mm x 1.7mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 207 +8 -30 to +85 -55 to +125 120 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
RMWB12001
Electrical Characteristics (At 25C), 50 system, Vd = +4V, Quiescent Current Idq = 96mA
Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal (Pin = -15dBm) Gain Variation vs. Frequency Power Output Saturated: (Pin = -1dBm) Drain Current Saturated (Pin = -1dBm) Power Added Efficiency (PAE): at Psat Input Return Loss (Pin = -15dBm) Output Return Loss (Pin = -15dBm) DC Detector Voltage at Pout = 20dBm
Note: 1: Typical range of gate voltage is -0.7 to 0.1V to set typical Idq of 96mA.
Min 8.5 23 18
Typ -0.2 25 3.0 21 120 26 12 10 0.5
Max 12
23 220
Units GHz V dB dB dBm mA % dB dB V
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Figure 1. Functional Block Diagram1
Drain Supply Vd1 Drain Supply Vd2 and Vd3 Output Power Detector Voltage Vdet
MMIC Chip RF IN RF OUT
Ground (Back of Chip) Gate Supply Vg
Note: 1: Detector delivers >0.1V DC into 3k load resistor for > +20dBm output power. If output power level detection is not desired, do not make connection to detector bond pad.
(c)2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
RMWB12001
Figure 2. Chip Layout and Bond Pad Locations
0.11 1.70 1.60 1.42 0.48 0.73 2.03 2.24 1.70 1.60
0.69
0.10 0.00 Dimensions in mm 0.0 0 1.1 1 2.1 2.2 24
0.10 0.00
Chip Size is 2.24mm x 1.70mm X 100m. Back of chip is RF and DC Ground.
Figure 3. Recommended Application Schematic Circuit Diagram
Output Power Detector Voltage Vdet Drain Supply Vd=4 V Bond Wires 100 pF 100 pF Bond Wires 10,000 pF 3 k 100 pF
MMIC Chip
RF IN
RF OUT
100 pF Bond Wires
Ground (Back of Chip)
10,000 pF
Gate Supply Vg
Note: Detector delivers > 0.1VDC into 3 k load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
(c)2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
RMWB12001
Figure 4. Recommended Assembly Diagram
10,000pF Drain Supply Vd= 4 V 3k 100pF 5mil Thick Alumina 50 Output Power Detector Voltage Vdet
Die-Attach 80Au/20Sn
100pF
100pF
RF Input
5 mil Thick Alumina 50
RF Output 2 mil Gap L< 0.015" (4 Places) 100pF Gate Supply Vg 10,000pF
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 96mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
(c)2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
RMWB12001
Performance Data
RMWB12001 12 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd=4 V, Idq = 96 mA 30 28 S21 (dB) 26 S11 24 S22 22 20 8.5 -20 -25 12.0 -15 0 -5 S11, S22 (GHz) -10 S21 (dB) 30 28 26 S11 24 22 20 18 6.0 S22 -15 -20 -25 -30 13.0 S21 RMWB12001 12 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd=4 V, Idq= 96 mA 0 -5 -10 S11, S22 (GHz)
S21
9.0
9.5
10.0 10.5 11.0 Frequency (GHz)
11.5
7.0
8.0
9.0 10.0 11.0 Frequency (GHz)
12.0
RMWB12001 12 GHz BA, Power Output and Gain at 3 dB Compression Vs. Frequency and Temperature On-Wafer Measurements, Vd=4 V, Idq = 96 mA, T=25C 25 24 G3dB 23 22 P3dB 21 20 19 8.5 9 9.5 10 10.5 Frequency (GHz) 11 11.5 12
(c)2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

▲Up To Search▲

Price & Availability of RMWB12001

	To Download RMWB12001 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .